500mA (Io), Reverse Recovery Time (trr),0ns, Reverse Leakage Current @ Vr,50µA @ 1200V, Capacitance @ Vr, F,131pF @ 1V, 1MHz, Thermal Resistance,2.3°C/W Jc, Operating Temperature - Junction,-55°C ~ 175°C./>
Attribute
Description
Manufacturer Part Number
GB02SLT12-214
Description
SIC SCHOTTKY DIODE 1200V 2A
Manufacturer Lead Time
1 week
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Stock:

Distributor: 15

Quantity Unit Price Ext. Price
1 ₹ 218.55000 ₹ 218.55

Stock:

Distributor: 3


Quantity Unit Price Ext. Price
1 ₹ 360.65000 ₹ 360.65
25 ₹ 350.24000 ₹ 8,756.00
100 ₹ 315.22000 ₹ 31,522.00
250 ₹ 281.14000 ₹ 70,285.00
500 ₹ 244.22000 ₹ 1,22,110.00
1000 ₹ 236.65000 ₹ 2,36,650.00

Product Attributes

Type Description
Category
Diode Type Silicon Carbide Schottky
Reverse DC Voltage(Vr) 1200V (1.2kV)
Current - Average Rectified (Io) 2A (DC)
Forward Voltage (Vf) 1.8V @ 2A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Reverse Leakage Current @ Vr 50µA @ 1200V
Capacitance @ Vr, F 131pF @ 1V, 1MHz
Thermal Resistance 2.3°C/W Jc
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type -
Package / Case -