Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	550V
Vce Saturation (Max) @ Ib, Ic	1V @ 400µA, 2A
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Power - Max	75W
Frequency - Transition	12MHz
Mounting Type	Through Hole
Package / Case	TO-220-3

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